Surface polishing of GSO scintillator using chemical process
Surface polishing of GSO scintillator using chemical process
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DOI：
10.1109/23.682440
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发表时间：
1998-06-01
影响因子：
1.8
通讯作者：
Susa, K
中科院分区：
文献类型：
--
作者：
Kurashige, K;Kurata, Y;Susa, K
Ce掺杂Gd2SiO5 （GSO）单晶具有光输出大、衰减常数短、吸收系数高等优点。以往的研究表明，对于长而窄的闪烁体，必须对其表面进行抛光才能有效地获得闪烁光输出。因此，我们新开发了一种化学工艺来抛光GSO晶体。用无水正磷酸在150 ~ 300℃下刻蚀GSO晶体，表面变得光滑，该工艺也适用于20x20x200mm(3)等大尺寸晶体，防止热冲击裂纹。使用化学抛光工艺可以提高闪烁体的效率。
A Ce doped Gd2SiO5, (GSO) single crystal is an excellent scintillator featuring a large light output, a short decay constant and a high absorption coefficient. It was shown in our previous studies that the surfaces of the scintillator should be polished to get scintillation light output efficiently especially for long and narrow scintillators. Therefore, we newly developed a chemical process to polish the GSO crystal. The surface of the GSO crystal was found to become smooth when it was etched using anhydrous orthophosphoric acid at 150-300 degrees C. The process was also proved to be applicable to large size crystal such as 20x20x200 mm(3) preventing thermal shock crack. An improvement in the scintillator efficiency was confirmed using the chemical polishing process.