Analytical slave-spin mean-field approach to orbital selective Mott insulators
Analytical slave-spin mean-field approach to orbital selective Mott insulators
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DOI：
10.1103/physrevb.96.125111
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发表时间：
2017-05
期刊：
影响因子：
--
通讯作者：
Y. Komijani;G. Kotliar
中科院分区：
文献类型：
--
作者：
Y. Komijani;G. Kotliar
我们使用从自旋平均场方法来研究存在洪德耦合相互作用的粒子空穴对称一能带和两能带哈伯德模型。通过哈密顿量的分析，我们表明两个轨道的锁定与轨道选择性莫特跃迁可以在朗道-金兹堡框架内制定。通过将从自旋平均场应用于杂质问题，我们能够在杂质和晶格之间建立对应关系。我们还考虑了轨道选择性莫特相对轨道间杂化的稳定性，并研究了在具有粒子空穴对称性的多轨道贝特晶格的情况下，从自旋方法处理轨道间隧道效应的局限性。
We use the slave-spin mean-field approach to study particle-hole symmetric one- and two-band Hubbard models in presence of Hund's coupling interaction. By analytical analysis of Hamiltonian, we show that the locking of the two orbitals vs.\,orbital-selective Mott transition can be formulated within a Landau-Ginzburg framework. By applying the slave-spin mean-field to impurity problem, we are able to make a correspondence between impurity and lattice. We also consider the stability of the orbital selective Mott phase to the hybridization between the orbitals and study the limitations of the slave-spin method for treating inter-orbital tunnellings in the case of multi-orbital Bethe lattices with particle-hole symmetry.