Carrier type dependence on spatial asymmetry of unipolar resistive switching of metal oxides
Carrier type dependence on spatial asymmetry of unipolar resistive switching of metal oxides
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DOI：
10.1063/1.4826558
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发表时间：
2013-10-21
影响因子：
4
通讯作者：
Kawai, Tomoji
中科院分区：
文献类型：
--
作者：
Nagashima, Kazuki;Yanagida, Takeshi;Kawai, Tomoji
我们报道了不同金属氧化物，包括NiOx，CoOx，TiOx-x，YSZ和SnO2-x的单极电阻开关的空间不对称性与载流子类型的关系。N型氧化物在阳极侧表现为单极电阻开关，而P型氧化物在阴极侧表现为单极电阻开关。在形成过程中，p型氧化物的导电路径从阳极延伸到阴极，n型氧化物的导电路径从阴极延伸到阳极。开关氧化层的载流子类型决定了形成过程中可能由氧离子漂移触发的单极电阻开关的空间不均匀性。(C)2013 AIP出版有限责任公司。
We report a carrier type dependence on the spatial asymmetry of unipolar resistive switching for various metal oxides, including NiOx, CoOx, TiO2-x, YSZ, and SnO2-x. n-type oxides show a unipolar resistive switching at the anode side whereas p-type oxides switch at the cathode side. During the forming process, the electrical conduction path of p-type oxides extends from the anode to cathode while that of n-type oxides forms from the cathode to anode. The carrier type of switching oxide layer critically determines the spatial inhomogeneity of unipolar resistive switching during the forming process possibly triggered via the oxygen ion drift. (C) 2013 AIP Publishing LLC.