Synthesis of carbon nitride films by high-density helicon wave-excited plasma sputtering
Synthesis of carbon nitride films by high-density helicon wave-excited plasma sputtering
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高密度螺旋波激发等离子体溅射合成氮化碳薄膜
DOI：
10.1016/s0257-8972(01)01119-7
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
S. Mikaye
中科院分区：
文献类型：
--
作者：
Y. Setsuhara;Y. Sakawa;T. Shoji;M. Kumagai;S. Mikaye
研究了m=0模螺旋波激发下反应等离子体溅射合成氮化碳薄膜的高密度氮等离子体特性。在0.1Pa的氮气中获得了密度为4× 1012 cm − 3的高密度氮气等离子体。光学发射光谱表明，线发射的原子氮（NI）和原子氮离子（NII）的螺旋波激发的高密度等离子体中大大增强，而从感应模式（非波激发）的低密度等离子体测量的光谱占主导地位的分子带发射与N2的第一个正系统。采用螺旋波激发的高密度氮等离子体反应溅射碳靶，在Si（100）衬底上沉积了氮化碳薄膜。使用卢瑟福背散射光谱法（RBS）进行CN膜的组成表征。RBS分析表明，在等离子体密度高达1× 1012 cm −3的条件下沉积CN薄膜，N/C比达到1.3，其中氮原子的线发射明显高于分子带发射。在等离子体密度和/或原子氮（NI）的发射强度比在衬底附近的分子带的增加被发现直接有助于在CN膜中的N/C组成比。傅里叶变换红外光谱（FTIR）分析表明，提高衬底温度可以有效地消除薄膜中的氢杂质键。
Properties of high-density nitrogen plasmas with excitation of the m=0 mode helicon wave has been studied for reactive plasma sputter synthesis of carbon nitride films. High-density nitrogen plasmas with densities of 4×1012cm−3were obtained in nitrogen at ∼0.1 Pa. Optical emission spectroscopy showed that the line emissions of atomic nitrogen (NI) and atomic-nitrogen ions (NII) were considerably enhanced in the helicon wave-excited high-density plasma, whereas, the spectra measured from the induction-mode (non-wave excitation) low-density plasma were dominated by those of the molecular band emission associated with the first positive system of N2. Carbon nitride films have been deposited on Si (100) substrates by reactive sputtering of carbon target with the helicon wave-excited high-density nitrogen plasmas at ∼0.1 Pa. Compositional characterizations of the CN films were performed using Rutherford backscattering spectrometry (RBS). The RBS analysis showed that the N/C ratio of ∼1.3 was achieved by depositing the CN films at plasma densities as high as 1×1012cm−3, where the line emissions of atomic nitrogen were significantly higher than the molecular band emissions. Increase in the plasma density and/or the emission-intensity ratio of the atomic nitrogen (NI) to the molecular band in the vicinity of the substrate was found to directly contribute to the N/C composition ratio in the CN films. Structural analysis by Fourier transform infrared spectroscopy (FTIR) showed that the bonds associated with hydrogen impurity could be effectively eliminated by increasing the substrate temperature during film depositions.