Effects of overheating in a single‐electron transistor

Effects of overheating in a single‐electron transistor
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单电子晶体管过热的影响

DOI：
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发表时间：
1994
期刊：
影响因子：
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通讯作者：
S. Vasenko
S. Vasenko
中科院分区：
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文献类型：
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作者：
A. Korotkov;M. R. Samuelsen;S. Vasenko

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考虑由流过单电子晶体管（SET）的电流引起的单电子晶体管（SET）的加热。电流和温升的计算应考虑到散热的各种路径。即使没有由于声子的转移而从SET的中心电极的热排出，该电极的温度仍然是有限的，因为电子隧穿减小了中心电极和外电极之间的温差。过热效应可能导致SET的I-V曲线在库仑阻塞阈值附近出现滞后。
Heating of a single‐electron transistor (SET) caused by the current flowing through it is considered. The current and the temperature increase should be calculated self‐consistently taking into account various paths of the heat drain. Even if there is no heat drain from the central electrode of the SET due to transfer of phonons, the temperature of this electrode remains finite because electron tunneling decreases the temperature difference between the central and outer electrodes. Overheating effects can cause hysteresis in the I‐V curve of the SET in the vicinity of the Coulomb blockade threshold.