Degradation of inversion layer electron mobility due to interface traps in metal‐oxide‐semiconductor transistors
Degradation of inversion layer electron mobility due to interface traps in metal‐oxide‐semiconductor transistors
复制标题
金属氧化物半导体晶体管中界面陷阱导致反型层电子迁移率下降
DOI：
10.1063/1.360013
复制
发表时间：
1995
期刊：
影响因子：
--
通讯作者：
C. Hamaguchi
中科院分区：
文献类型：
--
作者：
T. Matsuoka;S. Taguchi;Q. Khosru;K. Taniguchi;C. Hamaguchi
使用 n 沟道金属氧化物半导体晶体管研究了 Fowler-Nordheim 电子注入过程中反型层电子迁移率的降低。已发现，在垂直于 Si/SiO2 界面的给定有效电场下，有效迁移率倒数的变化 Δ(1/μEFF) 与生成的界面陷阱密度 ΔNit 线性相关。氧化物中的俘获电荷对迁移率下降的影响相当微不足道，这归因于俘获电荷来自Si/SiO2界面的位置。迁移率下降对反型层电子密度的依赖性也可以使用基于二维电子气的输运理论来解释。
Degradation of inversion layer electron mobility during Fowler–Nordheim electron injection has been investigated using n‐channel metal‐oxide‐semiconductor transistors. The change of the reciprocal effective mobility, Δ(1/μEFF), has been found to be linearly related to the generated interface trap density, ΔNit, at a given effective electric field normal to the Si/SiO2 interface. The effect of trapped charges in the oxide on the mobility degradation is rather insignificant, which is attributed to the location of trapped charges from the Si/SiO2 interface. The dependence of mobility degradation on inversion layer electron density has also been explained using a transport theory based on two‐dimensional electron gas.