Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process
Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process
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DOI：
10.1063/1.4905903
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发表时间：
2015-01
期刊：
影响因子：
1.6
通讯作者：
Meng-Fang Lin;Xu Gao;N. Mitoma;Takio Kizu;Wei Ou-Yang;S. Aikawa;T. Nabatame;K. Tsukagoshi
中科院分区：
文献类型：
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作者：
Meng-Fang Lin;Xu Gao;N. Mitoma;Takio Kizu;Wei Ou-Yang;S. Aikawa;T. Nabatame;K. Tsukagoshi
使用在相对低温（150至250 °C）下处理的InOx基薄膜中掺入Hf，实现了晶体管在正偏置应力（PBS）下的稳定运行。Hf-InOx薄膜晶体管（TFT）的迁移率高于8 cm 2/Vs。TFT不仅在PBS下60小时具有可忽略的迁移率退化和阈值电压的小偏移，而且它们在空气中在85 °C下也是热稳定的，而不需要钝化层。Hf-InOx TFT即使在150 °C下退火也可以保持稳定，以实现正偏置温度稳定性（PBTS）。通过在250 °C下对TFT进行退火来实现更高的稳定性，这源于Hf-InOx/栅极绝缘体界面处的陷阱密度的降低。这里获得的知识将有助于实现在低温下加工的稳定的TFT。
The stable operation of transistors under a positive bias stress (PBS) is achieved using Hf incorporated into InOx-based thin films processed at relatively low temperatures (150 to 250 °C). The mobilities of the Hf-InOx thin-film transistors (TFTs) are higher than 8 cm2/Vs. The TFTs not only have negligible degradation in the mobility and a small shift in the threshold voltage under PBS for 60 h, but they are also thermally stable at 85 °C in air, without the need for a passivation layer. The Hf-InOx TFT can be stable even annealed at 150 °C for positive bias temperature stability (PBTS). A higher stability is achieved by annealing the TFTs at 250 °C, originating from a reduction in the trap density at the Hf-InOx/gate insulator interface. The knowledge obtained here will aid in the realization of stable TFTs processed at low temperatures.