Experimental relation between Stranski-Krastanov growth of DIP/F16CoPc heterostructures and the reconstruction of the organic interface
Experimental relation between Stranski-Krastanov growth of DIP/F16CoPc heterostructures and the reconstruction of the organic interface
复制标题
DOI：
10.1021/jp809512a
复制
发表时间：
2009-01
影响因子：
3.7
通讯作者：
D. G. Oteyza;E. Barrena;Yi Zhang;T. N. Krauss;A. Turak;A. Vorobiev;H. Dosch
中科院分区：
文献类型：
--
作者：
D. G. Oteyza;E. Barrena;Yi Zhang;T. N. Krauss;A. Turak;A. Vorobiev;H. Dosch
结合AFM/X射线研究，我们揭示了在有机界面的重建伴随着的Sttranski-Kranstanov生长的二茚并[1，2-二苯并[1，2-d]芘（DIP）沉积在氟化钴酞菁（F16 CoPc）。这种重建涉及DIP覆盖的那些区域中的F16 CoPc填充的突然变化。在第一DIP单层完全完成后，整个F 16 CoPc界面层被重建，并最终被掩埋在生长的DIP膜下。我们证明，在70 °C的阈值温度下发生的从光滑到高度织构化的异质结构的形态转变与下面的F16 CoPc层的重构的热激活密切相关。这项研究提供了进一步的理解，最终决定有机异质结的可控生长的分子尺度的过程。
By a combined AFM/X-ray study, we unveil a reconstruction at the organic interface accompanying the Stranski-Kranstanov growth of di-indenoperylene (DIP) deposited on fluorinated cobalt-phthalocyanines (F 16 CoPc). This reconstruction involves an abrupt change in the F 16 CoPc packing in those areas covered by DIP. After the total completion of the first DIP monolayer, the entire F 16 CoPc interfacial layer is reconstructed and eventually becomes buried under the growing DIP film. We demonstrate that the morphological transition from smooth to highly textured heterostructures occurring at a threshold temperature of 70 °C is intimately related to the thermal activation of the reconstruction of the underlying F 16 CoPc layers. This study provides further understanding of the molecular-scale processes that ultimately determine the controlled growth of organic heterojunctions.