Characterization of anisotropic strain relaxation after mesa isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion hman method
Characterization of anisotropic strain relaxation after mesa isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion hman method
复制标题
采用新开发的高数值孔径和油浸 hman 方法表征应变 SGOI 和 SiGe/Si 结构的台面隔离后的各向异性应变弛豫
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
and T. Tezuka
中科院分区：
文献类型：
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作者：
K. Usuda;D. Kosemura;M. Tomita;A. Ogura;and T. Tezuka
