Self-Collapse Lithography
Self-Collapse Lithography
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DOI：
10.1021/acs.nanolett.7b02269
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发表时间：
2017-08-01
期刊：
影响因子：
10.8
通讯作者：
Weiss, Paul S.
中科院分区：
文献类型：
--
作者：
Zhao, Chuanzhen;Xu, Xiaobin;Weiss, Paul S.
我们报告了一种简单、高通量的软光刻工艺，该工艺利用在软弹性邮票上的微尺度浮雕特征边缘自然形成的纳米级通道。当与自组装单层（SAM）功能化底物接触时，冲压件的顶部会坍塌，从而通过化学升降过程选择性地去除SAM分子。我们将这种技术称为自坍缩光刻（SCL），利用传统光刻技术制备的具有微尺度特征的母片，可以轻松实现30 μ m以下的图案。通过减小印模高度从1 μ m到50 μ m，化学图案的特征尺寸可以从2 μ m到30 μ m以下连续变化。同样，对于固定的浮雕高度，将印章的杨氏模量从类似于2.0降低到类似于0.8 MPa，导致所产生图案的特征从类似于400到类似于100 nm。采用有限元模拟方法研究了自崩溃机制，模拟了图纹过程中附着应力和恢复应力之间的竞争。这些结果与实验数据吻合良好，并揭示了谱线宽度、沟道高度和谱线模之间的关系。此外，还将SCL应用于圆形和正方形的二维图形阵列。这些化学图案在蚀刻过程中充当抗蚀剂，将图案转移到底层材料（例如，金纳米结构）。这项工作为弹性体图章自塌的自然倾向提供了新的见解，并展示了一种利用这种行为通过纳米级化学剥离光刻实现图案的方法。
We report a facile, high-throughput soft lithography process that utilizes nanoscale channels formed naturally at the edges of microscale relief features on soft, elastomeric stamps. Upon contact with self-assembled monolayer (SAM) functionalized substrates, the roof of the stamp collapses, resulting in the selective removal of SAM molecules via a chemical lift-off process. With this technique, which we call self-collapse lithography (SCL), sub-30 mu patterns were achieved readily using masters with microscale features prepared by conventional photolithography. The feature sizes of the chemical patterns can be varied continuously from similar to 2 mu m to below 30 nm by decreasing stamp relief heights from 1 mu m to 50 nm. Likewise, for fixed relief heights, reducing the stamp Young's modulus from similar to 2.0 to similar to 0.8 MPa resulted in shrinking the features of resulting patterns from similar to 400 to similar to 100 nm. The self-collapse mechanism was studied using finite element simulation methods to model the competition between adhesion and restoring stresses during patterning. These results correlate well with the experimental data and reveal the relationship between the line widths, channel heights, and Young's moduli of the stamps. In addition, SCL was applied to pattern two-dimensional arrays of circles and squares. These chemical patterns served as resists during etching processes to transfer patterns to the underlying materials (e.g., gold nanostructures). This work provides new insights into the natural propensity of elastomeric stamps to self-collapse and demonstrates a means of exploiting this behavior to achieve patterning via nanoscale chemical lift-off lithography.