Dislocation behavior in heavily germanium-doped silicon crystal
Dislocation behavior in heavily germanium-doped silicon crystal
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DOI：
10.1016/s1369-8001(02)00128-2
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发表时间：
2002-08
影响因子：
4.1
通讯作者：
T. Taishi;Xinming Huang;I. Yonenaga;K. Hoshikawa
中科院分区：
文献类型：
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作者：
T. Taishi;Xinming Huang;I. Yonenaga;K. Hoshikawa
本文研究了用重锗掺杂硅种子生长无位错重锗掺杂CZ -Si晶体。当种子中的Ge浓度超过9×1019atoms/cm3时，热冲击引起的位错在种子7×7mm2in横截面上得到抑制。当生长晶体中的Ge浓度为5.7×1020atoms/cm3时，细胞开始生长，此浓度是重掺Ge Si单晶生长的极限，生长速率约为1mm/min。尽管使用大量掺锗的Si种子来生长无Dash颈缩的无位错CZ-Si晶体，但B或P掺杂导致的晶体电阻率可以精确控制。
Dislocation-free heavily Ge-doped Czochralski (CZ)-Si crystal growth using a heavily Ge-doped Si seed has been investigated. Dislocations due to thermal shock were suppressed in a seed 7×7mm2in cross-section when Ge concentration in the seed exceeded 9×1019atoms/cm3. When Ge concentration in the grown crystal was 5.7×1020atoms/cm3, cellular growth occurred, and this concentration was a limit for heavily Ge-doped Si single crystal growth with a growth rate of about 1mm/min. Resistivity in the crystal results in B or P doping could be controlled precisely in spite of using a heavily Ge-doped Si seed for growing a dislocation-free CZ-Si crystal without Dash necking.