Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs
Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs
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GaN 基蓝光 LED 中具有阶梯级 InGaN/GaN 应变消除层的 GaN 基 LED 性能改进
DOI：
10.1364/oe.21.008444
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发表时间：
2013-04-08
期刊：
影响因子：
3.8
通讯作者：
Zhang, Guoyi
中科院分区：
文献类型：
--
作者：
Jia, Chuanyu;Yu, Tongjun;Zhang, Guoyi
通过在有源层和n-GaN模板之间插入双级和阶梯级InGaN/GaN应变释放层（SRL）来改善氮化物基LED的性能。研究了台阶式InGaN/GaN SRL对GaN基LED结构、电学和光学特性的影响。基于k.p方法的应变效应分析表明，在InGaN/GaN多量子阱结构中插入SRL后，应变降低了12.5%。与传统LED相比，具有台阶级SRL的LED的表面形貌得到改善，并且观察到随着注入电流的增加，电致发光（EL）光谱中的较小蓝移。在20 mA下，InGaN/GaN SRL的输出功率约为15.3mW，提高了108%以上，显示了InGaN/GaN SRL在基于其应变消除功能的InGaN/GaN多量子阱光学特性调制方面的巨大潜力。(C)2013年美国光学学会
The performance of nitride-based LEDs was improved by inserting dual stage and step stage InGaN/GaN strain relief layer (SRL) between the active layer and n-GaN template. The influences of step stage InGaN/GaN SRL on the structure, electrical and optical characteristics of GaN-based LEDs were investigated. The analysis of strain effect on recombination rate based k.p method indicated 12.5% reduction of strain in InGaN/GaN MQWs by inserting SRL with step stage InGaN/GaN structures. The surface morphology was improved and a smaller blue shift in the electroluminescence (EL) spectral with increasing injection current was observed for LEDs with step stage SRL compared with conventional LEDs. The output power of LEDs operating at 20mA was about 15.3mW, increased by more than 108% by using step stage InGaN/GaN SRL, which shows great potential of such InGaN/GaN SRL in modulating InGaN/GaN MQWs optical properties based on its strain relief function. (C) 2013 Optical Society of America