Photo-oxidation of germanium nanostructures deposited by the cluster-beam evaporation technique
Photo-oxidation of germanium nanostructures deposited by the cluster-beam evaporation technique
复制标题
簇束蒸发技术沉积的锗纳米结构的光氧化
DOI：
10.1063/1.363917
复制
发表时间：
1997
影响因子：
3.2
通讯作者：
H. Morisaki
中科院分区：
文献类型：
--
作者：
S. Sato;S. Nozaki;H. Morisaki
系统地研究了用团束蒸发技术沉积的Ge纳米结构的光氧化过程。在沉积过程中保持液氮温度的衬底上沉积的Ge-液氮温度(LNT)薄膜有明显的光氧化作用，而在衬底温度为室温的Ge-RT薄膜中没有发现光氧化作用。这两种类型的Ge薄膜在光氧化方面的差异可以用Ge纳米结构的致密性来解释。光氧化的阈值光子能量接近由沉积的Ge-LNT薄膜的吸收光谱估算的光学带隙。提出了修正的电子活性氧化模型来解释Ge纳米结构的光氧化过程。还假设Ge核的最终大小由入射光子能量决定，并且随着光氧化时间的延长，Ge核的大小变得更加均匀。
The photo-oxidation of germanium (Ge) nanostructures deposited by the cluster-beam evaporation technique is systematically studied. The significant photo-oxidation is found in the Ge-liquid nitrogen temperature (LNT) film, which was deposited on substrates whose temperature was kept at liquid nitrogen temperature during the deposition but not in the Ge-RT film, whose substrate temperature was room temperature. The difference in photo-oxidation of both types of Ge films is explained by denseness of Ge nanostructures. The threshold photon energy for photo-oxidation is close to the optical band gap estimated from the absorption spectrum of the as-deposited Ge-LNT film. The modified electron-active oxidation model is proposed to explain the photo-oxidation of Ge nanostructures. It is also hypothesized that the final size of Ge cores is determined by the incident photon energy and that the size of Ge cores becomes more uniform for prolonged photo-oxidation.