Experimental and extraction procedure for the electrical characterisation of silicon photomultiplier detectors
Experimental and extraction procedure for the electrical characterisation of silicon photomultiplier detectors
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DOI：
10.1016/j.nima.2020.164483
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发表时间：
2020-11
影响因子：
1.4
通讯作者：
A. Duara;J. Lapington;J. Williams;S. Leach;D. Ross;T. Rawlins
中科院分区：
文献类型：
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作者：
A. Duara;J. Lapington;J. Williams;S. Leach;D. Ross;T. Rawlins
硅光电倍增管（SiPM）由于其低水平光子计数能力，在高能天体物理学、粒子物理学和医学成像领域越来越受欢迎。精确地测量SiPM是至关重要的，因此它们可以针对特定应用进行优化，例如用于成像大气切伦科夫望远镜（IACT）的紧凑型高能相机（CQ-S）。应用于SiPM的提取技术可以量化光电参数，例如增益、猝灭电阻、结、寄生和栅极电容、上升时间常数以及慢和快下降时间常数。许多作者已经将不同的提取技术应用于SiPM并进行了比较，通常基于等效电路模型的s域中的拉普拉斯变换。这些技术通常利用脉冲尾部，并且因此仅参数化脉冲的再充电阶段。我们将改进现有的方法，利用我们的传递函数模型中的SiPM脉冲的放电相位。在本文中，我们还应用这种方法，提出了一种新的SiPM探测器：滨松LVR 3 S14520-6075的电气特性。本文还详细介绍了一种方法，通过该方法可以获得准确的，平均的脉冲形状，不受后脉冲或暗噪声的污染。这是我们的分析方法的先决条件，该方法将从SiPM模型的传递函数推导出的脉冲形状与实验数据进行拟合。
Silicon photomultipliers (SiPMs), owing to their low-level photon counting capabilities, have increased in popularity in the field of high energy astrophysics, particle physics and medical imaging. It is crucial to accurately characterise SiPMs so they can be optimised for a particular application such as the Compact High Energy Camera (CHEC-S) for Imaging Atmospheric Cherenkov Telescopes (IACT). Extraction techniques, applied to SiPMs, can quantify opto-electrical parameters such as gain, quenching resistance, junction, parasitic and grid capacitance, rise time constant and slow and fast fall time constants. Various authors have applied and compared different extraction techniques to SiPMs, usually based on the Laplace Transform in the s-domain of the equivalent circuit model. These techniques typically utilise the pulse tail, and therefore only parameterise the recharge phase of the pulse. We will improve upon existing methods by utilising the discharge phase of an SiPM pulse in our transfer function model. In this paper, we have also applied this method to present the electrical characterisation of a novel SiPM detector: Hamamatsu LVR3 S14520-6075. The paper also details a method by which an accurate, average pulse shape, uncontaminated by after-pulsing or dark noise, can be obtained. This is a prerequisite for our analysis method, which fits the pulse shape derived from the transfer function of the SiPM model to the experimental data.