Preferential Killing of Cancer Cells Using Silicon Carbide Quantum Dots
Preferential Killing of Cancer Cells Using Silicon Carbide Quantum Dots
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DOI：
10.1166/jnn.2010.3049
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发表时间：
2010-12-01
影响因子：
--
通讯作者：
Geloen, Alain
中科院分区：
文献类型：
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作者：
Mognetti, Barbara;Barberis, Alessandro;Geloen, Alain
碳化硅量子点是高度发光的生物相容性纳米颗粒，其性质可能对生物医学应用特别感兴趣。在这项研究中，我们研究了碳化硅量子点（3C-SiC量子点）的细胞定位和对口腔鳞状细胞癌（AT-84和HSC）和永生化细胞系（S-G）的活力和增殖的影响。它们清楚地定位于细胞核中，但培养基中3C-SiC量子点的存在引起培养细胞的形态学变化。我们证明，3C-SiC量子点显示剂量和时间依赖性的选择性细胞毒性对癌症与永生化细胞在体外。由于经典抗增殖药物的局限性之一是缺乏选择性，这些结果为寻找抗增殖药物开辟了一条新的途径。
Silicon carbide quantum dots are highly luminescent biocompatible nanoparticles whose properties might be of particular interest for biomedical applications. In this study we investigated Silicon Carbide Quantum Dots (3C-SiC QDs) cellular localisation and influence on viability and proliferation on oral squannous carcinoma (AT-84 and HSC) and immortalized cell lines (S-G). They clearly localize into the nuclei, but the presence of 3C-SiC QDs in culture medium provoke morphological changes in cultured cells. We demonstrate that 3C-SiC QDs display dose- and time-dependent selective cytotoxicity on cancer versus immortalized cells in vitro. Since one of the limitations of classical antineoplastic drugs is their lack of selectivity, these results open a new way in the search for antiproliferative drugs.