Thermal analysis of high-bandwidth and energy-efficient 980 nm VCSELs with optimized quantum well gain peak-to-cavity resonance wavelength offset

Thermal analysis of high-bandwidth and energy-efficient 980 nm VCSELs with optimized quantum well gain peak-to-cavity resonance wavelength offset
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DOI:
10.1063/1.5003288
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发表时间:
2017-12
影响因子:
4
通讯作者:
H. Li;P. Wolf;Xiaowei Jia;J. Lott;D. Bimberg
H. Li;P. Wolf;Xiaowei Jia;J. Lott;D. Bimberg
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
H. Li;P. Wolf;Xiaowei Jia;J. Lott;D. Bimberg

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作为光互连光源的垂直腔面发射激光器(VCSEL)的静态和动态性能受温度的影响很大。我们研究了温度对高速节能980 nm VCSEL性能的影响,量子阱的峰值波长偏移到基本纵向器件腔模的波长,使得它们在60 °C左右对齐。描述了一种简单的方法来获得作为环境温度的函数的VCSEL的热阻,使我们能够提取的有源区温度和温度依赖的动态和静态参数。在低偏置电流下,我们可以看到−3 dB调制带宽f−3dB随着有源区温度的升高而增加,这与传统的已知情况不同。通过对f-3dB与有源区温度关系的详细分析,我们更好地理解了VCSEL的热限制,为下一代具有更好温度稳定性的器件设计提供了基础。用作光互连光源的垂直腔面发射激光器(VCSEL)的静态和动态性能受温度的影响很大。我们研究了温度对高速节能980 nm VCSEL性能的影响,量子阱的峰值波长偏移到基本纵向器件腔模的波长,使得它们在60 °C左右对齐。描述了一种简单的方法来获得作为环境温度的函数的VCSEL的热阻,使我们能够提取的有源区温度和温度依赖的动态和静态参数。在低偏置电流下,我们可以看到−3 dB调制带宽f−3dB随着有源区温度的升高而增加,这与传统的已知情况不同。通过对f−3dB与有源区温度关系的详细分析,我们对VCSEL的热限制有了更好的理解,为下一步的研究奠定了基础。
The static and dynamic performance of vertical-cavity surface-emitting lasers (VCSELs) used as light-sources for optical interconnects is highly influenced by temperature. We study the effect of temperature on the performance of high-speed energy-efficient 980 nm VCSELs with a peak wavelength of the quantum well offset to the wavelength of the fundamental longitudinal device cavity mode so that they are aligned at around 60 °C. A simple method to obtain the thermal resistance of the VCSELs as a function of ambient temperature is described, allowing us to extract the active region temperature and the temperature dependence of the dynamic and static parameters. At low bias currents, we can see an increase of the −3 dB modulation bandwidth f−3dB with increasing active region temperature, which is different from the classically known situation. From the detailed analysis of f−3dB versus the active region temperature, we obtain a better understanding of the thermal limitations of VCSELs, giving a basis for next generation device designs with improved temperature stability.The static and dynamic performance of vertical-cavity surface-emitting lasers (VCSELs) used as light-sources for optical interconnects is highly influenced by temperature. We study the effect of temperature on the performance of high-speed energy-efficient 980 nm VCSELs with a peak wavelength of the quantum well offset to the wavelength of the fundamental longitudinal device cavity mode so that they are aligned at around 60 °C. A simple method to obtain the thermal resistance of the VCSELs as a function of ambient temperature is described, allowing us to extract the active region temperature and the temperature dependence of the dynamic and static parameters. At low bias currents, we can see an increase of the −3 dB modulation bandwidth f−3dB with increasing active region temperature, which is different from the classically known situation. From the detailed analysis of f−3dB versus the active region temperature, we obtain a better understanding of the thermal limitations of VCSELs, giving a basis for nex...