InGaN/GaN laser diodes on semipolar (10) bulk GaN substrates
InGaN/GaN laser diodes on semipolar (10) bulk GaN substrates
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半极性 (10) 体 GaN 衬底上的 InGaN/GaN 激光二极管
DOI：
10.1002/pssc.200778460
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
S. Nakamura
中科院分区：
文献类型：
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作者：
A. Tyagi;H. Zhong;R. Chung;D. Feezell;M. Saito;K. Fujito;J. Speck;S. Denbaars;S. Nakamura
在低扩展缺陷密度的半极性(10)GaN衬底上首次实现了半极性氮化物激光二极管(LDS)。采用传统的金属有机化学气相沉积(MOCVD)方法生长LDS。在脉冲条件下制作了无涂层刻蚀小面的大面积激光器，并进行了测试。在占空比为0.025%，阈值电流密度为24.5kA/cm2的5µm×800µm器件中观察到了激光。在1.5A的驱动电流下，从单面器件测得65 mW的输出功率，计算的微分量子效率(ηDiff)为8%。在405.9 nm处观察到受激发射，其窄全宽半高宽小于0.3 nm。对于10微米×800微米的器件，最低测量JTH为16.5kA/cm2。(2018Wiley-VCH Verlag GmbH&Co.KGaA，Weinheim)
The first semipolar nitride laser diodes (LDs) have been realized on low extended defect density semipolar (10) GaN bulk substrates. The LDs were grown by conventional metal organic chemical vapor deposition (MOCVD). Broad area lasers with uncoated etched facets were fabricated and tested under pulsed conditions. Lasing was observed at a duty cycle of 0.025% with the threshold current density (Jth) being 24.5 kA/cm2 for a 5 µm × 800 µm device. An output power of 65 mW was measured from a single facet of the device at a drive current of 1.5 A, with the calculated differential quantum efficiency (ηdiff) being 8%. Stimulated emission was observed at 405.9 nm with a narrow full width half maximum (FWHM) of less than 0.3 nm. The lowest measured Jth was 16.5 kA/cm2 for a 10 µm × 800 µm device. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)