Temperature Coefficient of Resistance of the High Pressure Phases of Si, Ge, and Some III–V and II–VI Compounds
Temperature Coefficient of Resistance of the High Pressure Phases of Si, Ge, and Some III–V and II–VI Compounds
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DOI：
10.1063/1.1931135
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发表时间：
1962-11
影响因子：
3.2
通讯作者：
S. Minomura;G. Samara;H. G. Drickamer
中科院分区：
文献类型：
--
作者：
S. Minomura;G. Samara;H. G. Drickamer
已经获得了硅、锗和几种具有锌钛矿或纤锌矿结构的III-V族和II-VI族化合物的高压相的电阻温度系数。高压相的所有锌的化合物是金属。CdS的高压相是一种半导体，在室温下和作为温度函数的情况下也得到了CdSe的数据。光学上发现的跃迁也可以电学上得到。高压相的阻力-压力曲线具有相当大的结构。建立了液氮温度下锗和GaSb相变压力的上限。
The temperature coefficient of resistance has been obtained for the high pressure phases of silicon, germanium, and several III–V and II–VI compounds having the zinc-blende or wurtzite structure. The high pressure phases of all zinc-blende compounds were metallic. The high pressure phase of CdS is a semiconductor.Data were also obtained on CdSe at room temperature and as a function of temperature. The transition found optically is also obtained electrically. The resistance-pressure curve for the high pressure phase has considerable structure. It is metallic.An upper limit for the transition pressures of germanium and GaSb at liquid nitrogen temperature was established.