Quantitative electron holography of biased semiconductor devices.
Quantitative electron holography of biased semiconductor devices.
复制标题
偏置半导体器件的定量电子全息术。
DOI：
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发表时间：
2002
影响因子：
8.6
通讯作者：
P. Midgley
中科院分区：
文献类型：
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作者：
A. C. Twitchett;R. Dunin‐Borkowski;R. Broom;P. Midgley
利用电子全息技术在透射电子显微镜上原位测量了反向偏压下硅p-n结上的静电势分布。一种新的样品的几何形状的基础上聚焦离子束铣削的开发，并获得一系列的样品厚度和偏置电压，以允许全息对比度进行解释的结果。样品表面的物理和电学性质，这是由样品制备和电子束照射的影响，进行了讨论。
Electron holography is used to measure electrostatic potential profiles across reverse-biased Si p-n junctions in situ in the transmission electron microscope. A novel sample geometry based on focused ion-beam milling is developed, and results are obtained for a range of sample thicknesses and bias voltages to allow the holographic contrast to be interpreted. The physical and electrical nature of the sample surface, which is affected by sample preparation and electron beam irradiation, is discussed.