Semiconductor photonic dots: Visible wavelength-sized optical resonators
Semiconductor photonic dots: Visible wavelength-sized optical resonators
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半导体光子点：可见光波长大小的光学谐振器
DOI：
10.1063/1.123714
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发表时间：
1999
影响因子：
4
通讯作者：
K. Uesugi
中科院分区：
文献类型：
--
作者：
I. Suemune;A. Ueta;A. Avramescu;Satoru Tanaka;H. Kumano;K. Uesugi
在这里，我们描述了一种在紫外光到蓝光区构建半导体光子点的策略。采用选择性生长的方法在砷化镓衬底上生长了硫化锌点阵。得到的硫化锌网点具有金字塔结构，基面为800 nm正方形，高度为300 nm。{034}晶面构成了金字塔的侧壁。因此，棱锥点的大小由掩模图案唯一地确定。光学反射光谱显示了清晰的共振峰，通过对共振模的计算合理地分配了这些共振峰。每一次共振的Q值都在160-300量级，这是观察这类光子点的总自发辐射率变化的一个合理的值。
Here we describe a strategy toward constructing semiconductor photonic dots in the ultraviolet to blue region. An array of ZnS dots was grown on a GaAs substrate with a selective growth method. The ZnS dots have a pyramidal structure with the base plane of 800 nm square and the height of 300 nm. The {034} crystallographic planes form the sidewalls of the pyramids. Therefore, the size of the pyramidal dots is uniquely determined by the mask patterning. The optical reflection spectra showed clear resonance peaks which are reasonably assigned by the calculation of the resonance modes. Each resonance showed the Q values on the order of 160–300, a reasonable value to observe the modification of the total spontaneous emission rate in this kind of photonic dots.