Embedded Two-Phase Cooling of Large Three-Dimensional Compatible Chips With Radial Channels
Embedded Two-Phase Cooling of Large Three-Dimensional Compatible Chips With Radial Channels
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DOI：
10.1115/1.4033309
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发表时间：
2016-06-01
影响因子：
1.6
通讯作者：
Chainer, Timothy
中科院分区：
文献类型：
--
作者：
Schultz, Mark;Yang, Fanghao;Chainer, Timothy
使用介电冷却剂（R1234 ze）的嵌入式两相冷却的热性能在类似于20 mm类似于20 mm的大模具上进行评估。该测试车辆采用径向扩展通道与嵌入式引脚领域适合穿硅通孔（TSV）互连的多管芯堆叠。包括模仿未来几代八核处理器芯片预期的发电功能。初步结果表明，对于预期的功率图类型，可以在入口冷却剂温度上以小于30摄氏度的温度升高实现至少350 W/cm（2）的“核心”区域中的临界热通量（CHF）以及在芯片区域的其余部分中至少20 W/cm（2）的“背景”加热。这些热通量显著高于对于类似基本通道尺寸的相对长的平行通道装置所看到的那些热通量。流量，压降，“设备”，冷却剂温度的实验结果也提供了这些测试车辆沿着的详细信息，开发的测试设施，以适当的测试车辆的特点。
Thermal performance for embedded two-phase cooling using dielectric coolant (R1234ze) is evaluated on a similar to 20 mm similar to 20 mm large die. The test vehicles incorporate radial expanding channels with embedded pin fields suitable for through-silicon-via (TSV) interconnects of multidie stacks. Power generating features mimicking those anticipated in future generations of processor chips with eight cores are included. Initial results show that for the types of power maps anticipated, critical heat fluxes (CHFs) in "core" areas of at least 350 W/cm(2) with at least 20 W/cm(2) "background" heating in rest of the chip area can be achieved with less than 30 degrees C temperature rise over the inlet coolant temperature. These heat fluxes are significantly higher than those seen for relatively long parallel channel devices of similar base channel dimensions. Experimental results of flow rate, pressure drop, "device," and coolant temperature are also provided for these test vehicles along with details of the test facility developed to properly characterize the test vehicles.