Direct e-beam writing of dense and high aspect ratio nanostructures in thick layers of PMMA for electroplating
Direct e-beam writing of dense and high aspect ratio nanostructures in thick layers of PMMA for electroplating
复制标题
DOI：
10.1088/0957-4484/21/29/295303
复制
发表时间：
2010-07-23
期刊：
影响因子：
3.5
通讯作者：
David, Christian
中科院分区：
文献类型：
--
作者：
Gorelick, Sergey;Guzenko, Vitaliy A.;David, Christian
由于100 keV的电子穿透深入到抗蚀剂的散射很少的能力，我们能够直接写入各种密集和高纵横比的纳米结构在540 nm和1.1 μ m厚的层的聚（甲基丙烯酸甲酯）（PMMA）抗蚀剂。使用高对比度显影剂对通过电子束光刻产生的PMMA模具进行显影。通过电镀用Au填充显影的沟槽，使用模具将图案转移到金属纳米结构中。通过曝光比目标宽度窄的线，我们观察到改进的工艺宽容度和线宽控制。所获得的致密结构的纵横比在1.1 μ m PMMA层中接近20，并且对于电镀到该PMMA模具中的结构，纵横比> 16。该制造方法被成功地应用于生产Au衍射X射线菲涅耳波带片的质量非常好的50和70 nm的最外区使用540 nm和1.1 μ m厚的PMMA模具。此外，我们还制作了周期低至100 nm的高纵横比和致密Au纳米棒的规则阵列和高纵横比开口环谐振器。
Due to the ability of 100 keV electrons to penetrate deep into resist with little scattering, we were able to directly write various dense and high aspect ratio nanostructures in 540 nm and 1.1 mu m thick layers of poly(methyl methacrylate) (PMMA) resist. The PMMA molds produced by electron beam lithography were developed using a high contrast developer. The molds were used to transfer the pattern into metallic nanostructures by filling the developed trenches with Au by electroplating. By exposing lines narrower than the target width, we observed improved process latitude and line width control. The obtained aspect ratios of the dense structures are nearly 20 in 1.1 mu m PMMA layers and > 16 for structures electroplated into this PMMA mold. The fabrication method was successfully applied to produce Au diffractive x-ray Fresnel zone plates of exceptionally good quality with 50 and 70 nm outermost zones using 540 nm and 1.1 mu m thick PMMA molds. In addition, we also produced regular arrays of high aspect ratio and dense Au nanorods with periods down to 100 nm and high aspect ratio split-ring resonators.