Optically induced nuclear spin-spin couplings in GaAs manifested by spin echo decays under optical pumping
Optically induced nuclear spin-spin couplings in GaAs manifested by spin echo decays under optical pumping
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DOI：
10.1038/s41534-022-00571-x
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发表时间：
2022-05-18
影响因子：
7.6
通讯作者：
Shimizu, Tadashi
中科院分区：
文献类型：
--
作者：
Goto, Atsushi;Hashi, Kenjiro;Shimizu, Tadashi
半导体中的光致核自旋-自旋耦合有望用于核磁共振量子计算中的门操作。然而，人们对其特征知之甚少。在这项研究中，我们通过光泵浦下的双共振自旋回波衰变实验研究了GaAs中的光致耦合。在不同光功率下测量的Ga-71的平方回波衰减率(1/T-2)(2)表明，光致耦合随着光功率的增加而增加，而Ga-As对之间的异核耦合符号与偶极耦合符号相反，相互抵消。在较高的光功率下，光诱导的“可控”耦合有望最终超过“不可控”的核偶极耦合，成为主导，更适合于核磁共振量子计算中的门操作。
Optically induced nuclear spin-spin coupling in semiconductors is expected to serve for gate operations in nuclear-magnetic-resonance (NMR) quantum computations. However, not much is known about its characteristics. In this study, we investigate optically induced couplings in GaAs via double-resonance spin-echo decay experiments under optical pumping. The squared echo decay rate (1/T-2)(2) of Ga-71 measured under various light powers revealed that optically induced couplings increase with increasing light power, and the sign of heteronuclear couplings between Ga-As pairs is opposite to that of dipolar couplings, which cancel each other out. Under higher light power, the optically induced "controllable" coupling is expected to eventually surpass the "uncontrollable" nuclear dipolar coupling, becoming dominant, which is preferable for the gate operation in NMR quantum computation.