Electrically driven ultraviolet lasing behavior from phosphorus-doped p-ZnO nanonail array/n-Si heterojunction
Electrically driven ultraviolet lasing behavior from phosphorus-doped p-ZnO nanonail array/n-Si heterojunction
复制标题
磷掺杂 p-ZnO 纳米钉阵列/n-Si 异质结的电驱动紫外激光行为
DOI：
10.1063/1.3268438
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发表时间：
2009-11-23
影响因子：
4
通讯作者：
Wu, Jin-Lei
中科院分区：
文献类型：
--
作者：
Zhang, Jun-Yan;Zhang, Qi-Feng;Wu, Jin-Lei
研究了P - zno:P纳米阵列/n-Si异质结的电驱动紫外激光行为。采用化学气相沉积法制备了掺磷氧化锌纳米阵列。所构建的以氧化铟锡薄膜为接触电极的异质结具有明显的整流行为，导通电压约为2.5 V。p-n结有效地降低了激发阈值，电驱动紫外激光表现出较高的单色性：当正向电流达到24 mA时，在室温下获得了明显的紫外激光发射峰，半峰全宽分别为0.7、0.9和0.5 nm。三个尖峰代表不同的激光模式。
Electrically driven ultraviolet lasing behavior from p-ZnO:P nanonail array/n-Si heterojunction was demonstrated. Phosphorus-doped ZnO nanonail arrays were grown by chemical vapor deposition method. The constructed heterojunction with indium tin oxide films as the contacted electrodes demonstrated clear rectifying behavior, and the turn-on voltage was about 2.5 V. The p-n junction lowered the excitation threshold effectively and the electrically driven ultraviolet lasing behavior exhibited high monochromaticity: when the applied forward current reached 24 mA, distinct ultraviolet laser emission peaks were obtained at room temperature, and the full width at half maxims were 0.7, 0.9, and 0.5 nm, respectively. The three sharp peaks represented different lasing modes.