Doping in quantum cascade lasers. I. InAlAs–InGaAs∕InP midinfrared devices
Doping in quantum cascade lasers. I. InAlAs–InGaAs∕InP midinfrared devices
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DOI：
10.1063/1.2234804
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发表时间：
2006-08
影响因子：
3.2
通讯作者：
T. Aellen;M. Beck;N. Hoyler;M. Giovannini;J. Faist;E. Gini
中科院分区：
文献类型：
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作者：
T. Aellen;M. Beck;N. Hoyler;M. Giovannini;J. Faist;E. Gini
研究了掺杂浓度对9μ mInAlAs-InGaAs闪烁InP量子级联激光器性能的影响。研究了1.0×1011至2.6× 1011 cm-2之间的掺杂密度。在此范围内，观察到阈值和最大电流密度与片状载流子密度的线性增加。这些影响解释使用基于共振隧穿传输和速率方程的模型。
The effect of the doping densities on the performance of 9μm InAlAs–InGaAs∕InP quantum cascade lasers is presented. Doping densities varying between 1.0×1011 and 2.6×1011cm−2 were investigated. In this range, a linear increase in both threshold and maximum current density with sheet carrier density is observed. These effects are explained using a model based on resonant tunneling transport and rate equations.