Anomalous As desorption from InAs(100) 2×4
Anomalous As desorption from InAs(100) 2×4
复制标题
InAs(100) 2×4 的反常 As 解吸
DOI：
10.1063/1.109410
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发表时间：
1993
影响因子：
4
通讯作者：
A. Usui
中科院分区：
文献类型：
--
作者：
C. Sasaoka;Y. Kato;A. Usui
通过程序升温解吸（TPD）、等温解吸和反射高能电子衍射研究了砷在InAs(100) 2×4表面的解吸。TPD面积分析表明，InAs 2×4结构的As覆盖率θAs为0.7单层。As - TPD谱表现出两个解吸特征；300 ~ 400°C时尾巴宽，430°C时有明显的峰。430°C的峰可以用一级解吸动力学很好地描述，其指前因子ν为1.5×1019 s−1。这个极高的ν值很好地解释了InAs最佳分子束外延生长条件的窄窗口。
Arsenic desorption from the InAs(100) 2×4 surface is investigated through temperature programmed desorption (TPD), isothermal desorption, and reflection high‐energy electron diffraction. TPD area analysis indicates that the As coverage, θAs, of the InAs 2×4 structure is 0.7 monolayers. The As TPD spectrum shows two desorption features; a broad tail from 300 to 400 °C and a distinct peak at 430 °C. The 430 °C peak is well described in terms of a first‐order‐desorption kinetics with a preexponential factor ν of 1.5×1019 s−1. This extremely high ν value explains well the narrow window of optimal molecular beam epitaxy growth conditions for InAs.