A Four-Terminal, Inline, Chalcogenide Phase-Change RF Switch Using an Independent Resistive Heater for Thermal Actuation
A Four-Terminal, Inline, Chalcogenide Phase-Change RF Switch Using an Independent Resistive Heater for Thermal Actuation
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DOI：
10.1109/led.2013.2278816
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发表时间：
2013-10-01
影响因子：
4.9
通讯作者：
Lee, Michael J.
中科院分区：
文献类型：
--
作者：
El-Hinnawy, Nabil;Borodulin, Pavel;Lee, Michael J.
采用碲化锗制作了一种内嵌式硫族化物相变射频开关，该开关由集成的电隔离薄膜加热器驱动。施加到加热器端子的电压脉冲用于使相变材料在结晶状态和非结晶状态之间转变。测量了4.5 Ω（0.08 Ω-mm）的导通状态电阻以及分别为35 fF和0.5 M Ω的关断状态电容和电阻，导致1.0 THz的RF开关截止频率（F-co）和10（5）的关断/导通电阻比。输出三阶截点测量值>55 dBm，稳态工作时功耗为零，使其成为非易失性RF开关。据我们所知，这是第一个报告的实施的RF相变开关在四端，内联配置。
An inline chalcogenide phase-change radio-frequency (RF) switch using germanium telluride and driven by an integrated, electrically isolated thin-film heater for thermal actuation has been fabricated. A voltage pulse applied to the heater terminals was used to transition the phase-change material between the crystalline and amorphous states. An ON-state resistance of 4.5 Omega (0.08 Omega-mm) with an OFF-state capacitance and resistance of 35 fF and 0.5 M Omega, respectively, were measured resulting in an RF switch cutoff frequency (F-co) of 1.0 THz and an OFF/ON resistance ratio of 10(5). The output third-order intercept point measured >55 dBm, with zero power consumption during steady-state operation, making it a nonvolatile RF switch. To the best of our knowledge, this is the first reported implementation of an RF phase change switch in a four-terminal, inline configuration.