Near-field magnetophotoluminescence spectroscopy of composition fluctuations in InGaAsN.
Near-field magnetophotoluminescence spectroscopy of composition fluctuations in InGaAsN.
复制标题
InGaAsN 中成分波动的近场磁光致发光光谱。
DOI：
10.1103/physrevlett.87.277401
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发表时间：
2001
影响因子：
8.6
通讯作者：
R. Cook
中科院分区：
文献类型：
--
作者：
A. Mintairov;T. Kosel;J. Merz;P. A. Blagnov;A. Vlasov;V. Ustinov;R. Cook
在 InGaAsN 的温度依赖性近场磁光致发光光谱中观察到激子在类量子点成分涨落上的局域化。局域化是由这些合金的巨大弯曲参数驱动的，并通过在低于 70 K 的温度下出现超窄线（半宽度 <1 meV）来体现。我们展示了如何使用近场光学扫描显微镜来估计单个成分波动（簇）的尺寸、密度和氮过量，从而揭示氮分布中的随机效应与相分离效应。
The localization of excitons on quantum-dot-like compositional fluctuations has been observed in temperature-dependent near-field magnetophotoluminescence spectra of InGaAsN. Localization is driven by the giant bowing parameter of these alloys and manifests itself by the appearance of ultranarrow lines (half-width <1 meV) at temperatures below 70 K. We show how near-field optical scanning microscopy can be used for the estimation of the size, density, and nitrogen excess of individual compositional fluctuations (clusters), thus revealing random versus phase-separation effects in the distribution of nitrogen.