Determination of the Mn concentration in GaMnAs
Determination of the Mn concentration in GaMnAs
复制标题
GaMnAs 中 Mn 浓度的测定
DOI：
10.1088/0268-1242/20/5/008
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发表时间：
2005
影响因子：
1.9
通讯作者：
B. Gallagher
中科院分区：
文献类型：
--
作者：
L. Zhao;R. Campion;P. Fewster;R. Martin;B. Ber;A. P. Kovarsky;C. Staddon;K. Wang;K. Edmonds;C. Foxon;B. Gallagher
用高分辨X射线衍射仪对三种不同锰含量的1微米厚的Ga1-−-xMnxAs薄膜进行了表征。结果表明，它们是高度结晶的，生长是可重复性的。还用其他流行的方法：原位离子计、X射线荧光(XRF)、电子探针显微分析(EPMA)和二次离子质谱仪(SIMS)测定了锰的组成。结果表明，不同方法测得的锰含量不同，且随着锰含量的增加，两者之间的差异变小。
Three series of 1 µm thick Ga1−xMnxAs films with different Mn composition have been characterized using high-resolution x-ray diffraction (HRXRD). The results show that they are highly-crystalline and the growth is reproducible. The Mn compositions have also been measured by other popular methods: in situ ion gauge, x-ray fluorescence (XRF), electron probe microanalysis (EPMA) and secondary ion mass spectrometry (SIMS). The results show that the Mn concentrations measured by different methods are different and the difference between them becomes smaller with increasing Mn content.