Formation of aluminum nitride by intensified plasma ion nitriding
Formation of aluminum nitride by intensified plasma ion nitriding
复制标题
强化等离子体离子渗氮形成氮化铝
DOI：
10.1116/1.577309
复制
发表时间：
1991
期刊：
影响因子：
--
通讯作者：
S. Yan
中科院分区：
文献类型：
--
作者：
E. Meletis;S. Yan
本文尝试用强化辉光放电对纯铝进行离子氮化。结果表明，在低压、强化等离子体条件下，氮化铝的形成是可行的。形成的氮化物具有致密的结构和超细的核尺寸（小于100 a）。x射线和电子衍射结果表明，氮化相具有面心立方结构，晶格参数为4.38 a。俄歇分析结果表明，该化合物的成分接近Al3N。结果表明，氮化铝的形成机制与表面存在Al2O3密切相关，Al2O3可以通过高能辉光放电溅射，使氮与铝基体发生反应。
Ion nitriding of pure Al with an intensified glow discharge was attempted in the present work. The results showed that formation of aluminum nitride is feasible under low pressure, enhanced plasma conditions. The nitride formed had a dense structure and an ultrafine nuclei size (less than 100 A). The x‐ray and electron diffraction results showed that the nitride phase has a face centered cubic structure with a lattice parameter of 4.38 A. The Auger analysis results indicated that the composition of the compound was close to Al3N. It is suggested that the mechanism of aluminum nitride formation closely relates to the presence of Al2O3 at the surface that can be sputtered by the energetic glow discharge permitting nitrogen reaction with the aluminum substrate.