Great enhancement of pyroelectric properties for Ba0.65Sr0.35TiO3 films on Pt–Si substrates by inserting a self-buffered layer
Great enhancement of pyroelectric properties for Ba0.65Sr0.35TiO3 films on Pt–Si substrates by inserting a self-buffered layer
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DOI：
10.1063/1.3081971
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发表时间：
2009-02
影响因子：
3.2
通讯作者：
Chuanjian Wu;Yuanxun Li;J. Zhu;Xingchong Liu;W. L. Zhang
中科院分区：
文献类型：
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作者：
Chuanjian Wu;Yuanxun Li;J. Zhu;Xingchong Liu;W. L. Zhang
采用低温自缓冲层在铂/钛/二氧化硅/硅衬底上制备了(100)-Ba0.65Sr0.35TiO3(BST)薄膜。X射线衍射和原子力显微镜研究表明，BST薄膜的微结构强烈依赖于退火自缓冲层的表面形貌。提出了BST薄膜在自缓冲层上成核和生长的机理。研究发现，BST薄膜的热释电性能可以得到很大的提高。(10 0)-BST薄膜的热释电系数和材料优值系数分别为1.16×10 4μCm−2 K−1和2.18×10−4pa−1/2。经5 0 0 nm二氧化硅薄膜热隔离的(10 0)BST膜电容器的探测率为9.4×10 7 cm Hz1/2W−1。
(100)-Ba0.65Sr0.35TiO3 (BST) films were deposited on Pt/Ti/SiO2/Si substrates using a low-temperature self-buffered layer. X-ray diffraction and atomic force microscope investigations show that the microstructure of BST films strongly depends on surface morphology of annealed self-buffered layer. The mechanism of nucleus formation and the growth initiation of BST films on self-buffered layers were proposed. It was found that the pyroelectric properties of BST films can be greatly enhanced. The pyroelectric coefficient and material merit figure of (100)-BST films are 1.16×104 μC m−2 K−1 and 2.18×10−4 Pa−1/2, respectively. The detectivity of 9.4×107 cm Hz1/2 W−1 was obtained in the (100)-BST film capacitors thermally isolated by 500 nm SiO2 films.