Refining Process of BaZrO3 Particles in Coated Conductors by TFA-MOD Method
Refining Process of BaZrO3 Particles in Coated Conductors by TFA-MOD Method
复制标题
TFA-MOD法精炼包覆导体中BaZrO3颗粒
DOI：
10.1109/tasc.2016.2646481
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发表时间：
2017
影响因子：
1.8
通讯作者：
Y. Shiohara
中科院分区：
文献类型：
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作者：
T. Izumi;K. Nakaoka;Ryuji Yoshida;K. Kimura;T. Kato;M. Miura;Y. Shiohara
在三氟乙酸酯金属-有机分解过程中使用了广泛的涂层厚度，用于(Y，Gd)Ba2<sup>2</sup>Cu3<sup>3</sup>O<sup>7</sup>O<sup>7</sup></sup>涂层导体(YGdBCO)，包括具有薄的一次涂层thickness(<；italic>；d<；/italic>；<sub>once</sub>)，的BaZrO3<sup>BZO</sup>(BZO)粒子，其是为提高磁场(<；italic>；J<；/italic>；<sub>c</sub>(<；italic>；B<；/italic>；)).中的临界电流密度而开发的当斜体一次减少到30 nm时，斜体的值增加，并且用斜体一次=30 nm制造的样品表现出较高的<；italic>；J<；/italic>；<sub>c</sub>(<；italic>；B<；值/italic&>)分别为0.27mA/cm和1.60mA/cm<sup>2</sup>，在3T(<；italic>；B<；/italic>；//<；italic>；c<；/italic>；).时然而，斜体一次=17 nm的样品的<；italic>；J<；/italic>；<sub>c</sub>(<；italic>；值几乎等于或略低于斜体一次=30 nm的样品。这一趋势可以用YGdBCO超导薄膜中BZO颗粒尺寸的变化来解释。此外，在170~30 nm的不同条件下制备的前驱体的元素浓度线分布中，在相同的位置以一定的间隔观察到了铜元素的峰和其他元素的谷。然而，峰和谷被极大地抑制，并且在<lt；italic>；d<；/italic>；<SUB>ONCE</SUB>=17 nm的样品中几乎没有观察到波形结构。还原<；italic>；d<；/italic>；/italic>；one</sub>对BZO颗粒的细化作用可以用浓度谷/峰的存在引起的扩散限制来解释。此外，在具有<lt；italic>；d<；/italic>；<SUB>一次</SUB>=17 nm的样品中，由于谷/峰引起的扩散势垒的影响可能变得更弱。
A wide range of coating thicknesses was utilized in the trifluoroacetate metal-organic decomposition process for (Y, Gd) Ba<sub>2</sub>Cu<sub>3</sub>O<sub>7-δ</sub> (YGdBCO) coated conductor including BaZrO<sub>3 </sub> (BZO) particles with a thin once-coated thickness(<italic>d</italic><sub>once</sub>), which was developed for improving the critical current density in a magnetic field (<italic>J</italic><sub>c</sub>(<italic>B</italic>)). The value of <italic>J</italic><sub>c</sub> (<italic>B</italic>) increased as <italic>d</italic><sub>once</sub> decreased to 30 nm, and a sample fabricated with <italic>d</italic><sub>once</sub> = 30 nm exhibited high values of <italic>J</italic><sub>c</sub>(<italic>B</italic>) of 0.27 and 1.60 MA/cm<sup>2</sup> at 77 and 65 K, respectively, at 3 T (<italic>B</italic>//<italic>c</italic>). However, the value of <italic>J</italic><sub>c</sub>(<italic> B</italic>) of a sample with <italic>d</italic><sub>once</sub> = 17 nm was almost the same as or slightly lower than that of the sample with <italic>d</italic><sub>once</sub> = 30 nm. This tendency was explained by the change in the size of the BZO particles in the YGdBCO superconducting films. Additionally, the Cu elemental peak and the valleys of other elements were observed at the same position and at certain intervals in the elemental concentration line profiles along the depth direction of the precursors, fabricated under different <italic>d</italic> <sub>once</sub> conditions from 170 to 30 nm. However, the peaks and valleys were extremely suppressed, and the wave structure was barely observed in the sample with <italic>d</italic><sub>once</sub> = 17 nm. The refining of BZO particles by reducing <italic>d</italic><sub>once</sub> could be explained by the limited diffusion due to the existence of the concentration valleys/peaks. Moreover, the effect of the diffusion barrier due to the valleys/peaks might become weaker in the sample with <italic>d</italic><sub>once</sub> = 17 nm.
采用先进的 TFA-MOD 方法研究起始材料对 YBCO 涂层导体超导性能的影响
DOI：
--
发表时间：
2007
期刊：
影响因子：
--
作者：
K. Nakaoka;M. Miura;他11名
通讯作者：
他11名