Impact of Postdeposition Annealing Ambient on the Mobility of Ge nMOSFETs With 1-nm EOT Al2O3/GeOx/Ge Gate-Stacks
Impact of Postdeposition Annealing Ambient on the Mobility of Ge nMOSFETs With 1-nm EOT Al2O3/GeOx/Ge Gate-Stacks
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DOI：
10.1109/ted.2015.2509961
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发表时间：
2016-02-01
影响因子：
3.1
通讯作者：
Takagi, Shinichi
中科院分区：
文献类型：
--
作者：
Zhang, Rui;Yu, Xiao;Takagi, Shinichi
研究了沉积后退火（PDA）环境对薄等效氧化层厚度（EOT）Al 2 O3/GeOx/Ge栅叠层电学性能的影响。结果表明，在氘气氛下，PDA对Ge导带内表面态的抑制率可达40%。结果表明，在高正常场区，Ge nMOSFET的有效迁移率得到了提高。在10（13）cm（-2）的N-S下实现了396 cm（2）/Vs的电子迁移率，具有类似于1 nm的小EOT，这与迄今为止在如此小的EOT范围下报道的最高迁移率相似。
The impact of postdeposition annealing (PDA) ambient on electrical properties of thin equivalent oxide thickness (EOT) Al2O3/GeOx/Ge gate-stacks is investigated. It is found that the surface states inside the conduction band of Ge are significantly suppressed by 40% through PDA with atomic deuterium ambient. As a result, enhancement of the effective mobility in the Ge nMOSFETs is realized in high normal field region. The electron mobility of 396 cm(2)/Vs is achieved at N-S of 10(13) cm(-2) with small EOT of similar to 1 nm, which is similar to the highest mobility reported so far at such small EOT range.