High thermoelectric performance of n-type PbTe 1−y S y due to deep lying states induced by indium doping and spinodal decomposition
High thermoelectric performance of n-type PbTe 1−y S y due to deep lying states induced by indium doping and spinodal decomposition
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DOI：
10.1016/j.nanoen.2016.02.040
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发表时间：
2016-04
期刊：
影响因子：
17.6
通讯作者：
Qian Zhang;E. Chere;Yumei Wang;H. Kim;R. He;Feng Cao;K. Dahal;D. Broido;Gang Chen;Z. R
中科院分区：
文献类型：
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作者：
Qian Zhang;E. Chere;Yumei Wang;H. Kim;R. He;Feng Cao;K. Dahal;D. Broido;Gang Chen;Z. R
好的热电材料应该具有高的工程品质因数（ZT）eng，而不是峰值ZT，以实现高转换效率。在这项工作中，我们通过优化载流子浓度，以提高室温ZT使用深躺掺杂，铟，在PbTe 1 −ySy获得了良好的（ZT）engine。通过合金散射和Spinodal分解发现Pb_（0.98）In_（0.02）Te_（0.8）S_（0.2）具有较低的热导率，室温下的ZT高达~0.5，峰值ZT在673 K附近为~1.1。在冷端323 K和热端773 K时，计算效率可高达~12%.这种方法预计也适用于其他材料系统。
Good thermoelectric materials should have high engineering figure-of-merit (ZT)eng, not peakZT, to achieve high conversion efficiency. In this work, we achieved a good (ZT)engby optimizing the carrier concentration to improve the room temperatureZTusing deep lying dopant, indium, in PbTe1−ySy. It was found that a room temperatureZTas high as ~0.5 and a peakZT~1.1 at about 673 K were obtained in Pb0.98In0.02Te0.8S0.2due to a lower thermal conductivity by alloy scattering and Spinodal decomposition. The calculated efficiency could be as high as ~12% at cold side 323 K and hot side 773 K. The approach is expected to work in other materials systems too.