Quantitative analysis of in-field defects in image sensor arrays
Quantitative analysis of in-field defects in image sensor arrays
复制标题
图像传感器阵列中现场缺陷的定量分析
DOI：
10.1109/dft.2007.59
复制
发表时间：
2007
期刊：
影响因子：
--
通讯作者：
Z. Koren
中科院分区：
文献类型：
--
作者：
Jenny Leung;J. Dudas;G. Chapman;I. Koren;Z. Koren
像素密度和传感器阵列尺寸的增长增加了出现现场像素缺陷的可能性。一项正在进行的关于成像仪缺陷发展的研究现已为我们提供了足够的数据，能够量化缺陷增长的特征。初步调查显示，缺陷是随机分布的，两个缺陷像素之间的最近距离约为 79-340 像素。此外，根据对 98 个无簇缺陷的观察，在 99% 的置信水平下，缺陷的直径估计小于像素尺寸的 2.3%。事实上，在对各种数码相机的研究中没有发现缺陷簇，我们可以得出这样的结论：缺陷不太可能与材料退化或不完善的制造有关，而是由于辐射等环境压力造成的。此外，经统计研究证实，缺陷聚类的缺失提供了有关缺陷大小的信息以及对缺陷发展性质的深入了解。
Growth of pixel density and sensor array size increases the likelihood of developing in-field pixel defects. An ongoing study on defect development in imagers has now provided us sufficient data to be able to quantify characteristics of defect growth. Preliminary investigations have shown that defects are distributed randomly and the closest distance between two defective pixels is approximately 79-340 pixels apart. Furthermore, from an observation of 98 cluster-free defects, the diameter of the defect is estimated to be less than 2.3% of a pixel size at 99% confidence level. The fact that no defect clusters were found in the study of various digital cameras allows us to conclude that defects are not likely to be related to material degradation or imperfect fabrication but are due to environmental stress such as radiation. Furthermore, as verified by a statistical study, the absence of defect clustering provides information on the size of defects and insight into the nature of the defect development.