Bottom‐Up Synthesized Nanoporous Graphene Transistors
Bottom‐Up Synthesized Nanoporous Graphene Transistors
复制标题
DOI：
10.1002/adfm.202103798
复制
发表时间：
2021-08
影响因子：
19
通讯作者：
Zafer Mutlu;P. Jacobse;Ryan D McCurdy;J. Llinas;Yuxuan Lin;Gregory Veber;F. Fischer;M. Crommie-
中科院分区：
文献类型：
--
作者：
Zafer Mutlu;P. Jacobse;Ryan D McCurdy;J. Llinas;Yuxuan Lin;Gregory Veber;F. Fischer;M. Crommie-
当以原子精度合成时，纳米多孔石墨烯（NPG）可以表现出均匀的电子带隙和合理设计的新兴电子特性，有望用于场效应晶体管（FET）等电子器件。为石墨烯纳米带（GNR）开发的自下而上的表面合成方法现在为 NPG 形成提供了必要的原子精度，以获得这些理想的特性。然而，迄今为止，自下而上合成的 NPG 在电子设备中的潜力尚未得到充分开发。在这里，展示了基于自下而上合成的 V 形 NPG (C-NPG) 的 FET，该 FET 由横向连接的 V 形 GNR 定义的有序纳米孔阵列组成。 C-NPG FET 表现出优异的开关性能，开关比超过 104，这与 C-NPG 的结构质量密切相关。这些器件在空气中作为 p 型晶体管运行，而在真空下测量时观察到 n 型传输，这与气体或湿气的可逆吸附有关。 C-NPG 中电荷传输的理论分析也通过电子结构和传输计算进行，揭示了 C-NPG 中强电导各向异性效应。本研究为高性能石墨烯电子器件的设计提供了重要见解，其中实现了弹道电导和传导各向异性，可用于逻辑应用以及用于化学或生物检测的超灵敏传感器。
Nanoporous graphene (NPG) can exhibit a uniform electronic band gap and rationally‐engineered emergent electronic properties, promising for electronic devices such as field‐effect transistors (FETs), when synthesized with atomic precision. Bottom‐up, on‐surface synthetic approaches developed for graphene nanoribbons (GNRs) now provide the necessary atomic precision in NPG formation to access these desirable properties. However, the potential of bottom‐up synthesized NPG for electronic devices has remained largely unexplored to date. Here, FETs based on bottom‐up synthesized chevron‐type NPG (C‐NPG), consisting of ordered arrays of nanopores defined by laterally connected chevron GNRs, are demonstrated. C‐NPG FETs show excellent switching performance with on–off ratios exceeding 104, which are tightly linked to the structural quality of C‐NPG. The devices operate as p‐type transistors in the air, while n‐type transport is observed when measured under vacuum, which is associated with reversible adsorption of gases or moisture. Theoretical analysis of charge transport in C‐NPG is also performed through electronic structure and transport calculations, which reveal strong conductance anisotropy effects in C‐NPG. The present study provides important insights into the design of high‐performance graphene‐based electronic devices where ballistic conductance and conduction anisotropy are achieved, which could be used in logic applications, and ultra‐sensitive sensors for chemical or biological detection.