Structural Properties of Yttria-stabilized Zirconia Thin Films Grown by Pulsed Laser Deposition
Structural Properties of Yttria-stabilized Zirconia Thin Films Grown by Pulsed Laser Deposition
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脉冲激光沉积生长的氧化钇稳定氧化锆薄膜的结构特性
DOI：
10.1557/jmr.1999.0181
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发表时间：
1999
影响因子：
2.7
通讯作者：
R. Chang
中科院分区：
文献类型：
--
作者：
J. Dai;H. Ong;R. Chang
采用脉冲激光沉积法在（0001）蓝宝石衬底上制备了氧化钇稳定的氧化锆（YSZ）薄膜，利用X射线衍射（XRD）、高分辨透射电子显微镜（HRTEM）和扫描电子显微镜（SEM）对薄膜进行了研究。结果发现，在沉积过程中的YSZ薄膜的晶体取向的变化作为一个功能的氧气压力。在低氧压（50 mTorr）下，生长出轮廓分明的（111）取向YSZ薄膜。高氧压有利于（001）取向YSZ晶粒的形核。提出了一个解释（001）YSZ择优生长方向的模型。利用实验数据，我们开发了一种两步法在（0001）蓝宝石衬底上外延生长高质量（001）取向YSZ的工艺。
Yttria-stabilized zirconia (YSZ) thin films grown by the pulsed laser deposition method on (0001) sapphire substrates have been studied by x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and scanning electron microscopy (SEM). It was found that the crystal orientation of the YSZ films changes as a function of oxygen pressure during deposition. At low oxygen pressure (50 mTorr), well-defined (111) oriented YSZ films are grown. High oxygen pressure favors the nucleation of (001) oriented YSZ grains. A model to explain the preferred growth direction of (001) YSZ is presented. Utilizing the experimental data, we have developed a two-step process to epitaxially grow high-quality (001) oriented YSZ on (0001) sapphire substrate.