Uniform, stable and high integrated field emitter arrays for high performance displays and vacuum microelectronic switching devices
Uniform, stable and high integrated field emitter arrays for high performance displays and vacuum microelectronic switching devices
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用于高性能显示器和真空微电子开关器件的均匀、稳定和高集成的场发射器阵列
DOI：
10.1109/iedm.1997.650483
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发表时间：
1997
期刊：
影响因子：
--
通讯作者：
K. Fukuda
中科院分区：
文献类型：
--
作者：
M. Nakamoto;T. Hasegawa;K. Fukuda
为了实现高性能的显示器和真空微电子开关器件，首次采用转移模（Transfer Mold）技术制备了均匀、稳定、高集成度的场发射阵列（FEAs）。具有7，840，000个尖端/cm/sup 2/的高发射器密度、包含9，400，000个发射器尖端（迄今为止世界上报道的最高值之一）的传递模塑FEA已经证明了世界上小于0.7%的发射波动的最低值，以及高度均匀、无缺陷和无闪烁的荧光。首次提出了真空微电子开关器件的工作原理，并通过施加/spl plusmn/1 kV的高阳极电压进行了实验验证，其将能够将使用常规半导体器件例如光触发晶闸管（LTT）和门极关断晶闸管（GTO）的高压电力转换器的尺寸和电功率损耗减小到小于1/2。分别为100和1/10。
Extremely uniform, stable and high integrated field emitter arrays (FEAs) have been developed by the Transfer Mold emitter fabrication method to realize high performance displays and vacuum microelectronic switching devices for the first time. Transfer Mold FEAs having high emitter density of 7,840,000 tips/cm/sup 2/, containing 9,400,000 emitter tips, one of the highest value reported in the world to date, have demonstrated the lowest value of less than 0.7% of emission fluctuation in the world, and highly uniform, no defect, and flickerless fluorescence. The principle of the vacuum microelectronic switching devices also has been proposed and experimentally verified for the first time by applying high anode voltage of /spl plusmn/1 kV, which will be capable of decreasing the size and the electric power loss of the high voltage electric power converters using conventional semiconductor devices such as Light-triggered thyristors (LTT) and Gate Turn Off thyristors (GTO) to less than 1/100 and 1/10 of them, respectively.
低功函数传递模纳米结构场发射器
DOI：
--
发表时间：
2008
期刊：
Proc. of Advanced Display Materials and Devices 12
影响因子：
--
作者：
T.Sato;K.Hirose;K.Kitahara;A.Hara;M. Nakamoto.
通讯作者：
M. Nakamoto.