High-Temperature Magnetic Tunnel Junction Magnetometers Based on L1$_0$-PtMn Pinned Layer
High-Temperature Magnetic Tunnel Junction Magnetometers Based on L1$_0$-PtMn Pinned Layer
复制标题
基于L1$_0$-PtMn固定层的高温磁隧道结磁力计
DOI：
10.1109/lsens.2020.2991654
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发表时间：
2020
影响因子：
2.8
通讯作者：
Ando Yasuo
中科院分区：
文献类型：
--
作者：
Ranjbar Sina;Al-Mahdawi Muftah;Oogane Mikihiko;Ando Yasuo
开发了基于磁隧道结(MTJ)的高灵敏度磁强计传感器，可在250°C以上的高温下工作。我们用优化的PtMn反铁磁体取代了常用的IrMn反铁磁钉扎层，由于其L10晶体结构，具有高的磁热稳定性。我们研究了测量温度对使用IrMn或PtMn钉扎层的传感器MTJ堆栈的磁阻(MR)、交换偏置和灵敏度的影响。当温度升高到250℃时，IrMn的磁流变率从146%下降到50%，PtMn钉扎层的磁阻从133%下降到80%。与IrMn传感器相比，基于PtMn的MTJ传感器的灵敏度可保持在高达250°C的恒定灵敏度(4-5%/Oe)，后者的灵敏度显著降低。这种高温性能与使用PtMn的钉扎层中交换偏置的热稳定性有关。
Magnetometer sensors with high sensitivity based on magnetic tunnel junctions (MTJs) were developed to operate at high temperatures of more than 250 °C. We replaced the commonly used IrMn antiferromagnetic pinning layer with an optimized PtMn antiferromagnet, which has a high magnetic thermal stability due to its L10crystal structure. We investigate the effect of measurement temperature on magnetoresistance (MR), exchange bias, and sensitivity in sensor MTJ stacks using either IrMn or PtMn pinning layers. Upon increasing the temperature up to 250 °C, the MR ratio decreases from 146% to 50% for IrMn, and 133% to 80% for PtMn pinning layers. The PtMn-based MTJ sensors sustain a constant sensitivity (4-5 %/Oe) up to 250 °C, compared with IrMn-based sensors, which decrease drastically. This high-temperature performance links to the thermal stability of exchange bias in the pinned layer by using PtMn.
影响因子：
3.2
作者：
Almeida, J. M.;Ferreira, R.;Maass, W.
通讯作者：
Maass, W.