Room-temperature stimulated emission
Room-temperature stimulated emission
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室温受激发射
DOI：
10.1147/rd.71.0072
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发表时间：
1963
期刊：
影响因子：
--
通讯作者：
M. Nathan
中科院分区：
文献类型：
--
作者：
G. Burns;M. Nathan
在Nathan等人，1和Hall等人最近的论文中，报道了77°K正向偏置GaAsp-n结中的受激发射，并讨论了3，4在这些注入激光器中的方向性效应。几位作者已经讨论了这些测量的理论基础5-7。在这封信中，报道了这些二极管在室温下的谱线变窄和方向性。
In the recent papers by Nathan et al.,1and Hall et al.,2stimulated emission was reported in forward-biased GaAs p-n junctions at 77°K. Directionality effects3,4in these injection lasers have also been discussed. The theoretical groundwork for these measurements has been discussed by several authors5–7. In this Letter line narrowing and directionality at room temperature in these diodes are reported.