High current, high current density field emitter array cathodes
High current, high current density field emitter array cathodes
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DOI：
10.1116/1.1849189
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发表时间：
2005-03-01
影响因子：
1.4
通讯作者：
Holland, CE
中科院分区：
文献类型：
--
作者：
Schwoebel, PR;Spindt, CA;Holland, CE
微制造的场发射器已显示出非常高的电流密度（> 100 A/cm(2)）和总发射电流（> 1 A）的潜力。然而，实现这种潜力一直难以实现，主要是因为这些阴极在发射器阵列上表现出不足的发射均匀性。在本文中，我们报告了一种基于发射器尖端在操作过程中自加热的原位处理方法的开发，该方法被证明可以提高发射器尖端之间的发射均匀性。对于所制造的给定电压，发射电流相差三个数量级的两个尖端在受控脉冲至非常高的发射电流之后，其发射特性基本上相同。当该方法应用于 50 000 个尖端阵列时，可产生 300 mA 的发射电流 (40 A/cm(2))。由于空间电荷限制，实验安排阻止了向更高发射水平的发展。预计通过对实验装置进行适当修改，可以实现类似于 100 A/cm(2) 的 1 A 发射。 (c) 2005 年美国真空协会。
Microfabricated field emitters have shown the potential for very high current densities (> 100 A/cm(2)) and total emission currents (> 1 A). However, realizing this potential has been elusive, primarily because these cathodes exhibit insufficient emission uniformity over an emitter array. In this article we report the development of an in situ processing method based on emitter tip self-heating during operation that is shown to improve emission uniformity between emitter tips. Two tips differing in emission current by three orders of magnitude for a given voltage as fabricated are shown to be essentially identical in their emission characteristics after controlled pulsing to very high emission current. When the method was applied to a 50 000 tip array, it produced 300 mA of emission (40 A/cm(2)). The experimental arrangement prevented advancing to higher emission levels due to space charge limitations. It is expected that 1 A of emission at similar to 100 A/cm(2) is possible with appropriate modifications to the experimental apparatus. (c) 2005 American Vacuum Society.