Spectral Splitting Solar Cells Constructed with InGaP/GaAs Two-Junction Subcells and Infrared PbS Quantum Dot/ZnO Nanowire Subcells
Spectral Splitting Solar Cells Constructed with InGaP/GaAs Two-Junction Subcells and Infrared PbS Quantum Dot/ZnO Nanowire Subcells
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DOI：
10.1021/acsenergylett.2c01380
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发表时间：
2022-07
影响因子：
22
通讯作者：
Haibin Wang;S. Nakao;N. Miyashita;Yusuke Oteki;Maxime Giteau;Y. Okada;T. Takamoto;H. Saito;S. Magaino;K. Takagi;T. Hasegawa;T. Kubo;Takumi Kinoshita;J. Nakazaki;H. Segawa
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作者：
Haibin Wang;S. Nakao;N. Miyashita;Yusuke Oteki;Maxime Giteau;Y. Okada;T. Takamoto;H. Saito;S. Magaino;K. Takagi;T. Hasegawa;T. Kubo;Takumi Kinoshita;J. Nakazaki;H. Segawa
我们构建了一个红外PbS胶体量子点（QD）/ZnO纳米线（NW）太阳能电池，以开发一种用于多结太阳能电池的溶液处理底部太阳能电池。PbS QD/ZnO NW叉指结构包括1 μm长的ZnO NW，使得能够构建空间分离的载流子路径和厚PbS QD层，用于高红外光捕获。此外，光学管理在收获过程中起着至关重要的作用。使用红外透明导电氧化物作为窗口层和宽带隙QD电子阻挡层（EBL），减少了EBL的寄生吸收，并且通过金属背接触增强了反射光的再吸收。因此，所开发的太阳能电池在1个太阳照度下产生39.2mA/cm 2的短路电流密度，在870 nm红外区域上产生17.4mA/cm 2的短路电流密度。此外，包括InGaP/GaAs顶部/中间（2 J-TM）子电池和红外PbS CQD/ZnO NW底部（1 J-B）子电池的串联连接的光谱分裂太阳能电池在1个太阳照射下产生30.5%的功率转换效率。
We constructed an infrared PbS colloidal quantum dot (QD)/ZnO nanowire (NW) solar cell to develop a solution-processed bottom solar cell for multijunction solar cells. PbS QD/ZnO NW interdigitated structures comprising 1 μm long ZnO NWs enable the construction of spatially separated carrier pathways and thick PbS QD layers for high infrared light harvesting. Additionally, optical management plays an essential role in the harvesting process. Using infrared transparent conductive oxides as window layers and a wide-band-gap QD electron blocking layer (EBL), the parasitic absorption of the EBL is reduced and the reabsorption of the light reflected is enhanced by the metal back contact. Thus, the developed solar cell produced a short-circuit current density of 39.2 mA/cm2under 1 sun illumination and 17.4 mA/cm2over an 870 nm infrared region. Furthermore, series-connected spectral splitting solar cells, comprising an InGaP/GaAs top/middle (2J-TM) subcell and the infrared PbS CQD/ZnO NW bottom (1J-B) subcell, yielded a power conversion efficiency of 30.5% under 1 sun illumination.