Luminescence mechanism of ZnO thin film investigated by XPS measurement
Luminescence mechanism of ZnO thin film investigated by XPS measurement
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DOI：
10.1007/s00339-007-4275-3
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发表时间：
2008-02-01
影响因子：
2.7
通讯作者：
Wang, C. -M.
中科院分区：
文献类型：
--
作者：
Hsieh, P. -T.;Chen, Y. -C.;Wang, C. -M.
采用X射线光电子能谱(XPS)和光致发光(PL)技术研究了退火环境对反应射频磁控溅射在SiO2/Si基底上沉积ZnO薄膜发光特性的影响。对ZnO薄膜的O 1s 峰的分析表明，在环境气氛下，随着退火温度从600℃到900℃，氧空位的浓度增加。 PL 结果表明，523 nm 处的绿光发射强度也随着温度的升高而增加。在不同的退火气氛下，PL分析表明仅获得一个发射峰（523 nm），表明只有一类缺陷导致绿色发光。当ZnO薄膜在900℃环境气氛中退火时，绿光发射最强，氧空位浓度最高。研究结果表明，ZnO薄膜绿光发射的发光机制主要与氧空位有关。
The effects of annealing environment on the luminescence characteristics of ZnO thin films that were deposited on SiO2/Si substrates by reactive RF magnetron sputtering were investigated by X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL). An analysis of the O 1s peak of ZnO film revealed that the concentration of oxygen vacancies increased with the annealing temperature from 600 degrees C to 900 degrees C under an ambient atmosphere. The PL results demonstrated that the intensity of green light emission at 523 nm also increased with temperature. Under various annealing atmospheres, the analyses of PL indicated that only one emission peak (523 nm) was obtained, indicating that only one class of defect was responsible for the green luminescence. The green light emission was strongest and the concentration of oxygen vacancies was highest when the ZnO film was annealed in ambient atmosphere at 900 degrees C. The results in this investigation show that the luminescence mechanism of the emission of green light from a ZnO thin film is associated primarily with oxygen vacancies.