Electric force microscopy as a probe of active and passive elements of integrated circuits
Electric force microscopy as a probe of active and passive elements of integrated circuits
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DOI：
10.1016/s0169-4332(97)00456-x
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发表时间：
1998-03-01
影响因子：
6.7
通讯作者：
Linn, JH
中科院分区：
文献类型：
--
作者：
Karpov, I;Belcher, RW;Linn, JH
集成电路（IC）器件结构和金属互连线已经用原子力显微镜（AFM）进行了研究。轻敲模式AFM用于获取形貌数据。本文的重点是在非接触模式下金属化AFM针尖与样品表面之间的静电相互作用。通过改变尖端电位，以最大限度地减少尖端和表面之间的静电力，我们能够定量探测金属互连和平面电阻器中的电压，以及图像pn结和陷阱电荷。(C)1998年，Elsevier Science BV。
Integrated circuit (IC) device structures and metal interconnects have been investigated with atomic force microscopy (AFM). Tapping mode AFM was used to acquire topographical data. The focus of this paper is on the electrostatic interaction between a metallized AFM tip and the sample surface in noncontact mode. By varying the tip potential to minimize the electrostatic force between the tip and the surface, we were able to quantitatively probe voltages in metal interconnects and planar resistors, as well as image pn junctions and trapped charges. (C) 1998 Elsevier Science BV.