Synthesis and characterization of fluorinated aminoalkoxide and iminoalkoxide gallium complexes: Application in chemical vapor deposition of Ga2O3 thin films
Synthesis and characterization of fluorinated aminoalkoxide and iminoalkoxide gallium complexes: Application in chemical vapor deposition of Ga2O3 thin films
复制标题
氟化氨基醇盐和亚氨基醇盐镓配合物的合成和表征:在 Ga2O3 薄膜化学气相沉积中的应用
DOI:
--
复制
发表时间:
2004
期刊:
影响因子:
--
通讯作者:
Gene
中科院分区:
文献类型:
--
作者:
Y. Chi;Tsung;Yi;Shu;A. Carty;L. Scoles;K. Udachin;S. Peng;Gene
Gallium trichloride, GaCl3, reacts with the in situ prepared sodium salt of an aminoalkoxide or iminoalkoxide, denoted as NaL, to give the disubstituted compounds GaL2Cl, where L = OC(CF3)2CH2NMe2 (1), OC(CF3)2CH2C(Me)NMe (2). Single-crystal X-ray diffraction studies on 1 and 2 indicated the formation of a trigonal-bipyramidal structure with chloride and alkoxy groups occupying the equatorial sites and the nitrogen donors located at the axial positions. For the related trimethylgallium reagent GaMe3, addition of an equal amount of amino alcohol LH induced the elimination of methane to afford the complexes GaMe2L, where L = OC(CF3)2CH2NHMe (3), OC(CF3)2CH2NHBut (4), OC(CF3)2CH2NMe2 (5), in high yields. The crystal structure of 5 was determined by X-ray diffraction, showing a distorted-tetrahedral framework which differs greatly from that observed in the trigonal-bipyramidal Ga complexes 1 and 2. Variable-temperature 1H NMR studies on 3 and 4 indicated the occurrence of rapid N→Ga bond scission, followed by...