GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices
GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices
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用于非线性光学器件的 GaAs (100) 和 (111) 衬底上的 GaAs/Ge/GaAs 亚晶格反转外延
DOI：
10.1143/jjap.38.l508
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发表时间：
1999
影响因子：
1.5
通讯作者：
R. Ito
中科院分区：
文献类型：
--
作者：
S. Koh;T. Kondo;Minoru Ebihara;Tetsuya Ishiwada;H. Sawada;H. Ichinose;I. Shoji;R. Ito
用分子束外延技术在晶格匹配的GaAs/Ge/GaAs(100)和(111)系统中进行了亚晶格反向外延，并用反射高能电子衍射和择优刻蚀证实了这一结果。在Ga As/Ge/Ga As(100)系统中，亚晶格反转是由界面处产生的反相畴的自湮灭所辅助的。在Ga As/Ge/Ga As(111)系统中，亚晶格反转是由于As端面的独特结构造成的。用横截面透射电子显微镜研究了亚晶格反转的GaAs晶体的质量。介绍了一种利用亚晶格反向外延技术制备周期磁区反转结构的方法，并将其应用于GaAs/Ge/GaAs(100)系统。
Sublattice reversal epitaxy is demonstrated in lattice-matched GaAs/Ge/GaAs (100) and (111) systems using molecular beam epitaxy, and confirmed by reflection high energy electron diffraction and preferential etching. In the GaAs/Ge/GaAs (100) system, the sublattice reversal is assisted by self-annihilation of the antiphase domains generated at the GaAs/Ge interface. In the GaAs/Ge/GaAs (111) system, the sublattice reversal results from the unique structure of the As-terminated Ge (111) surfaces. The quality of the sublattice-reversed GaAs crystal is investigated using cross-sectional transmission electron microscopy. A method to fabricate a periodically domain-inverted structure using sublattice reversal epitaxy is demonstrated for the GaAs/Ge/GaAs (100) system.