High quality GaN epilayers grown on carbon nanotube patterned sapphire substrate by metal–organic vapor phase epitaxy
High quality GaN epilayers grown on carbon nanotube patterned sapphire substrate by metal–organic vapor phase epitaxy
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DOI：
10.1039/c2ce25326g
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发表时间：
2012-06
期刊：
影响因子：
3.1
通讯作者：
H. Long;Yang Wei;T. Yu;Zhe Wang;C. Jia;Zhijian Yang;Guoyi Zhang;S. Fan
中科院分区：
文献类型：
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作者：
H. Long;Yang Wei;T. Yu;Zhe Wang;C. Jia;Zhijian Yang;Guoyi Zhang;S. Fan
利用定向碳纳米管膜对c面蓝宝石衬底进行图案化。采用金属有机物气相外延系统在碳纳米管图案化蓝宝石衬底（CPSS）上外延生长高质量的GaN。X射线衍射和透射电子显微镜（TEM）的结果证实了通过引入碳纳米管薄膜的GaN的结晶质量的改善。通过扫描电子显微镜（SEM）和透射电子显微镜（TEM）观察到碳纳米管表面存在大量的孔洞，孔洞尺寸在几十到几百纳米之间。空洞周围的位错湮灭有助于位错密度的降低。在CPSS上制造的发光二极管的性能也得到了明显的改善，在20 mA时发光强度提高了15%，饱和电流从80 mA延迟到120 mA。
Aligned carbon nanotube films were utilized to pattern a c-plane sapphire substrate. High quality GaN was obtained by epitaxy growth on carbon nanotube patterned sapphire substrates (CPSS) by a metal–organic vapor phase epitaxy system. Results of X-ray diffraction and transmission electron microscopy (TEM) confirmed the improvement of crystalline quality of GaN by introduction of the carbon nanotube film. A large number of voids with sizes of tens to hundreds of nanometers were observed on carbon nanotubes by scanning electron microscopy (SEM) and TEM. The dislocation annihilation around voids was believed to be helpful for the reduction of dislocation density. Performance of light-emitting diodes manufactured on CPSS was also clearly improved, as 15% enhancement of luminous intensity at 20 mA, and 50% delay of saturation current from 80 mA to 120 mA.