Sublimation of the Si(111) surface in ultrahigh vacuum
Sublimation of the Si(111) surface in ultrahigh vacuum
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DOI：
10.1103/physrevb.55.r10237
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发表时间：
1997-04-15
影响因子：
3.7
通讯作者：
Aizawa, N
中科院分区：
文献类型：
--
作者：
Homma, Y;Hibino, H;Aizawa, N
我们研究了升华的Si（111）表面使用70 μ m宽的（111）平面在超高真空加热过程中的火山口底部创建。平面上的台阶间距是由平面中心的宏空位成核决定的，而台阶以台阶流的方式移动。台阶间距与吸附原子扩散长度有关，并且随着温度的升高而减小，直到1190 ℃。在1200 ℃左右，间距显示出类似于过渡的行为，并增加到1190 ℃时的2.5倍。台阶流保持在台阶间距过渡区上方。
We investigated sublimation of a Si(111) surface using a 70-mu m-wide (111) plane created at the bottom of a crater during ultrahigh-vacuum heating. Step spacing on the plane is determined by nucleation of macrovacancies in the center of the plane while steps move in a step-flow manner. The step spacing is related to the adatom diffusion length and decreases with increasing temperature of up to 1190 degrees C. Around 1200 degrees C, the spacing shows a transitionlike behavior and increases to 2.5 times the value at 1190 degrees C. Step flow is maintained above the step-spacing transition.