Effect of sulfurization in hydrogen sulfide on the properties of Cu(In,Ga)Se2 thin-film absorbers
Effect of sulfurization in hydrogen sulfide on the properties of Cu(In,Ga)Se2 thin-film absorbers
复制标题
硫化氢硫化对Cu(In,Ga)Se2薄膜吸收体性能的影响
DOI：
10.1007/s10854-013-1437-2
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
Jinzhang Xu
中科院分区：
文献类型：
--
作者：
P. Zou;L. Wan;S. Pan;Mingming Meng;Zhiqiang Guo;Jinzhang Xu
在这项研究中，Cu(In,Ga)Se2 薄膜在 H2S-Ar 气体混合物中硫化，处理温度为 400 至 550 °C，时间为 10 至 60 分钟。采用X射线衍射、高分辨率TEM、扫描电子显微镜、拉曼散射光谱、能谱仪研究了硫化后吸收层晶相、微观结构和化学成分的变化。在硫化过程中，Cu(In,Ga)(S,Se)2薄膜的结晶度和硫化程度很大程度上取决于硫化温度。在低硫化温度下生长的样品中发现了“Cu-Au”相，并在高硫化温度下转变为黄铜矿型相。在拉曼光谱中还观察到了 Cu(S,Se) 合金的 Se-S 振动模式。
In this research Cu(In,Ga)Se2thin films were sulfurized in H2S–Ar gas mixture with processing temperatures ranging from 400 to 550 °C and time ranging from 10 to 60 min. The change in crystal phases, microstructure and chemical compositions of the absorber layers after sulfurization were investigated by X-ray diffraction, high resolution TEM, scanning electron microscopy, Raman scattering spectrum, energy dispersive X-ray spectrometer. In the process of sulfurization, the crystallinity and sulfurization degree of the Cu(In,Ga)(S,Se)2films depend strongly on the sulfurization temperature. The ‘Cu–Au’ phase was found for samples grown at low sulfurization temperature and transformed to chalcopyrite-type phase at high sulfurization temperature. The Se–S vibration mode of Cu(S,Se) alloy was also observed in the Raman spectra.
影响因子：
6.7
作者：
Jackson, Philip;Hariskos, Dimitrios;Powalla, Michael
通讯作者：
Powalla, Michael