III-Nitride Tunnel Junctions and Their Applications
III-Nitride Tunnel Junctions and Their Applications
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DOI：
10.1007/978-981-10-3755-9_8
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
S. Rajan;T. Takeuchi
中科院分区：
文献类型：
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作者：
S. Rajan;T. Takeuchi
半导体中的带间隧道效应 [1, 2] 是量子力学在电子器件中最清晰的表现之一。在重掺杂 PN 结中的带间隧道效应中，在反向偏压下，电子从价带中的填充态隧道到导带中的空态。在正向偏压下，当电子从导带中的填充态隧道到价带中的空态时，会观察到隧道电流，如图 8.1 所示。由于 n 侧导带的偏置能量高于价带，因此电子无法隧道进入状态。结果，电流减小，导致特征负微分电阻状态。
Interband tunneling in semiconductors [1, 2] is one of the clearest manifestations of quantum mechanics in electronic devices. In the case of interband tunneling in a heavily doped PN junction, in reverse bias, electrons tunnel from the filled states in the valence band to the empty states in the conduction band. Under forward bias, tunneling current is observed when electrons tunnel from filled states in the conduction band to empty states in the valence band, as shown in Fig. 8.1. As the conduction band on the n-side becomes biased higher in energy than the valence band, states are not available for electrons to tunnel into. As a result, the current decreases, leading to a characteristicnegative differential resistanceregime.